This archive report was first published on 23 August 2021.
On August 19, 2021, Samsung announced the development of its first 512 GB DDR5 module, designed to offer improved performance and efficiency.
The new module, which operates at 7200 MHz, provides 40% more execution contrasted with the best current DDR4 strips, making it a significant upgrade for data centers and complex servers.
According to Samsung, the module was designed using 8 DDR5 passes stacked and interconnected through TSV (through-silicon-by means of) innovation, a denser and thinner design compared to the previous DDR4 modules.
The new module also features advanced technologies such as SBR (Same-Bank Refresh) and DFE (Decision Feedback Equalizer), which enable a 10% more proficient DRAM transport and improve signal solidness, respectively.
Additionally, the module includes an ODECC (on-die error correction code) to guarantee the module more noteworthy security in the board’s information.
While the 512 GB DDR5-7200 module is not intended for consumer use, Samsung plans to enter production toward the end of 2021, with most worldwide markets expected to transition to DDR5 by 2023-2024.
Modules Intended for Data Centers ¶
As noted by Samsung, the 512 GB DDR5-7200 module is specifically designed for data centers and complex servers, offering improved performance and efficiency for these high-demand applications.
